Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2005-05-31
2008-03-04
Nguyen, Ha Tran (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
07339390
ABSTRACT:
Systems and methods for controlling electro-migration, and reducing the deleterious effects thereof, are disclosed. Embodiments provide for reversal of an applied voltage to an integrated circuit when a measurement indicative of an extent of electro-migration indicates that a healing cycle of operation is warranted. During the healing cycle, circuits of the integrated circuit function normally, but electro-migration effects are reversed. In one embodiment, micro-electro-mechanical switches are provided at a lowest level of metallization to switch the direction of current through the levels of metallization of the integrated circuit. In another embodiment, if the measurement indicative of the extent of electro-migration exceeds a reference level by a specifiable amount, then the voltage applied to the integrated circuit is reversed in polarity to cause current to switch directions to counter electro-migration. A plurality of switches are provided to switch current directions through a lowest level of metallization so that the circuits function normally even though the polarity of the applied voltage has been reversed.
REFERENCES:
patent: 5514974 (1996-05-01), Bouldin
patent: 6147361 (2000-11-01), Lin et al.
patent: 6320391 (2001-11-01), Bui
patent: 6614251 (2003-09-01), Ootsuji
patent: 2004/0012492 (2004-01-01), Testin et al.
patent: 3228430 (1991-10-01), None
patent: 3088299 (1992-06-01), None
patent: 4070006 (1993-02-01), None
patent: 2000040727 (2000-02-01), None
Jiang Tao, et al., “Metal Electromigration Damage Healing Under Bidirectional Current Stress,” IEEE Electron Device Letters, vol. 14, vol. 12, Dec. 1993, pp. 554-556.
IBM Technical Disclosure Bulletin, “On Chip Electromigratoin Sensor using Silicon Device,” May 1992, pp. 197-198.
IBM Technical Disclosure Bulletin, “Metal Electromigration Sensor,” Sep. 1983, pp. 1998-1999.
IBM Technical Disclosure Bulletin, “Electromigration Failure Detection,” Jan. 1983, p. -4076.
Cranford, Jr. Hayden Clavie
Hsu Louis Lu-Chen
Mason James Stephen
Yang Chih-Chao
Cockburn Joscelyn G.
Nguyen Ha Tran
Nguyen Tung X.
Schubert Osterrieder & Nickelson PLLC
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