Systems and methods for communicating with memory blocks

Details Systems and methods for communicating with memory blocks Systems and methods for communicating with memory blocks

2002-05-14

2004-01-13

Lam, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S230030, C365S189070

Reexamination Certificate

active

06678200

ABSTRACT:

TECHNICAL FIELD
The present invention is generally related to data storage, and more particularly, is related to systems and methods for communicating with memory blocks.
BACKGROUND OF THE INVENTION
A magnetic random access memory (MRAM) device is a memory device that comprises a plurality of memory blocks, termed as MRAM blocks. Each MRAM block has word lines, bit lines, and memory cells, referred to as MRAM cells. The MRAM cells are used to store data and lie at intersections of word lines and bit lines.
In an MRAM device, there is a limit on the amount of data that can be written to the MRAM device since the MRAM device usually has a limited number of small-sized MRAM blocks or a limited number of large-sized MRAM blocks. The MRAM device has a limited number of large-sized MRAM blocks since usually a high value of write current drive voltage is required to write to large-sized MRAM blocks and cumulative read currents produced by consecutively reading from large-sized MRAM blocks interfere with reading from the MRAM blocks. A high value of write current drive voltage is usually required since the write current is fixed and large-sized MRAM blocks have high resistances which cause the high value of write current drive voltage to reduce as the MRAM blocks are written. Reading from large-sized MRAM blocks interferes with the read operation since consecutively reading from a large number of large-sized MRAM blocks generates a large amount of current that interferes with the read operation.
The MRAM device has a limited number of small-sized MRAM blocks since each small-sized MRAM block has peripheral circuitry that occupies a large amount of area on the MRAM device, thereby reducing any available area for the MRAM blocks. The peripheral circuitry typically includes decoders and drivers at each edge of a small-sized MRAM block. Hence, in an MRAM device, there is a limit on the amount of data that can be written to the MRAM device.
From the above, it can be appreciated that it would be desirable to have a memory device that has a large number of memory blocks, thereby allowing to store a large amount of data that is not limited by the constraints mentioned above.
SUMMARY OF THE INVENTION
The present invention provides systems and methods for communicating with memory blocks. Briefly described, in architecture, one embodiment of the system, among others, can be implemented as follows: a plurality of memory blocks; a plurality of repeaters; and a line that couples the memory blocks with the repeaters such that the repeaters can read from the memory blocks. The present invention can also be viewed as providing a method for communicating with memory blocks. In this regard, one embodiment of such a method, among others, can be broadly summarized by the following: coupling the memory blocks to repeaters; and reading from the memory blocks.


REFERENCES:
patent: 5124951 (1992-06-01), Slemmer et al.
patent: 6188615 (2001-02-01), Perner et al.
patent: 6191972 (2001-02-01), Miura et al.
patent: 6256224 (2001-07-01), Perner et al.
patent: 6473335 (2002-10-01), Bohm et al.
patent: 6487108 (2002-11-01), Pochmuller
Scheuerlein, Roy; Gallagher, William; Parkin, Stuart; Lee, Alex; Ray, Sam; Robertazzi, Ray; Reohr, William, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” 2000 IEEE International Solid-State Circuits Conference, 8 pgs.
Durlan, M.; Naji, P.,; DeHerrera, M.; Tehraniu, S,; Kerszykow ski, G., Kyler, K., “Nonvolatile RAM based on Magentic Tunnel Junction Elements”, 2000 IEEE International Solid-State Circuits Conference, 7 pgs.

Affiliated with

Also associated with

Rating

Systems and methods for communicating with memory blocks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for communicating with memory blocks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for communicating with memory blocks will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3220071