Systems and methods for a magnetic memory device that...

Details Systems and methods for a magnetic memory device that... Systems and methods for a magnetic memory device that...

2007-08-14

2007-08-14

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C385S105000, C385S105000

Reexamination Certificate

active

11281027

ABSTRACT:
An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor and a diode is included and configured to couple the magnetic sensing device to a bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current line in the cell.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6781874 (2004-08-01), Hidaka
patent: 7164598 (2007-01-01), Jeong et al.

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