System that prevents reduction in data retention

Details System that prevents reduction in data retention System that prevents reduction in data retention

2006-11-16

2009-11-17

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S148000, C365S211000, C365S225500, C365S046000

Reexamination Certificate

active

07619936

ABSTRACT:
One embodiment of the present invention provides a system including a tester and a back end manufacturing system. The tester tests a resistive memory and obtains configuration data for the resistive memory. The back end manufacturing system prevents temperatures in back end processing from reducing data retention time of the configuration data in the resistive memory.

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Stefan Lai, et al., “OUM-A 180 NM Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”. Intel Corporation, 2001. (4 pgs.).
Y.H. Ha, et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”. Samsung Electronics, Co., Ltd., 2003. (2 pgs.).
H. Horii, et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”. Samsung Electronics Co., Ltd., 2003. (2 pgs.).

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