Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-29
2006-08-29
Tran, Michael (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S617000
Reexamination Certificate
active
07098538
ABSTRACT:
A system semiconductor device includes a system LSI cell portion and a global wiring layer. The system LSI cell portion has a plurality of functional blocks for realizing specific functions on a semiconductor chip. The global wiring layer has a wiring layer on a semiconductor substrate. The system LSI cell portion is laminated with the global wiring layer.
REFERENCES:
patent: 4791609 (1988-12-01), Ito
patent: 5124273 (1992-06-01), Minami
patent: 5162240 (1992-11-01), Saitou et al.
patent: 5300798 (1994-04-01), Yamazaki et al.
patent: 5430397 (1995-07-01), Itoh et al.
patent: 278148 (2001-08-01), Watanabe et al.
patent: 6278148 (2001-08-01), Watanabe et al.
patent: 64-74751 (1989-03-01), None
patent: 7-22587 (1995-01-01), None
patent: 7-86502 (1995-03-01), None
patent: 7-307434 (1995-11-01), None
patent: A 7-231050 (1996-08-01), None
patent: 10-173057 (1998-06-01), None
patent: 10-209317 (1998-08-01), None
Dohya Akihiro
Tago Masamoto
Hoang Quoc
NEC Corporation
Tran Michael
LandOfFree
System semiconductor device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System semiconductor device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System semiconductor device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3661773