Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-07-27
2009-06-09
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S750000, C257S751000
Reexamination Certificate
active
07544986
ABSTRACT:
A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact openings with reduced striations and CD loss are formed in a photosensitive silicone ladder polymer (PVSQ) layer by patterning the PVSQ film employing a photomask with a predefined pattern, exposing the PVSQ film to i-line, developing the exposed PVSQ film in a mixture of anisole/xylene in a ratio of about 1:2 for about 30 seconds, and subsequently optionally annealing the undeveloped PVSQ film at a temperature of about 300° C. to about 600° C.
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English translation of JP 2000-136223 (May 2000).
Yasuda et al., “Photocrosslinking Reactoin of Vinyl-Functional Polyphenylsilsesquioxane Sensitized with Aromatic Bisazide Compounds”, Journal of Polymer Science: Part A: Polymer Chemistry, vol. 39, 4196-4205, (2001).
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Wilson Allan R.
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