Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-04
2009-08-18
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S508000, C257S773000, C257S786000, C257S909000, C257S296000, C257S304000, C257SE29256, C257SE29261
Reexamination Certificate
active
07576390
ABSTRACT:
A method for providing a high power, low resistance, high efficient vertical DMOS device is disclosed. The method comprises providing a semiconductor substrate with a source body structure thereon. The method further comprises providing a plurality of slots in the source/body structure and providing a metal within the plurality of slots to form a plurality of structures. A slotted PowerFET array is disclosed. This slotted approach results in a dense PowerFET, a low Ron due to the slotted design, an oxide isolated process without any due extra steps other than the slots, lower capacitance, lower leakage, smaller die, improved heat transfer, improved electro-migration, lower ground resistance, less cross talk, drops the isolation diffusion and the sinker diffusion, mostly low temperature processing and provides double metal with single metal processing. Also disclosed is a method for integrating this vertical DMOS with CMOS, bipolar and BCD to provide an optimized small, efficient die using the buried power buss approach and these technologies.
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Armand Marc
Louie Wai-Sing
Micrel Inc.
Sawyer Law Group P.C.
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