Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-25
2007-12-25
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S792000, C438S535000, C257SE21006, C257SE21304, C257SE21319, C257SE21347
Reexamination Certificate
active
11334181
ABSTRACT:
The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor substrate within. An ultraviolet radiation source (210) is disposed within the housing. A treatment medium (208) is also provided within the housing. The semiconductor substrate is enclosed within the housing and exposed to the treatment medium. The ultraviolet radiation source exposes the semiconductor substrate to ultraviolet radiation, desorbing the contaminants from the seed layer.
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DeGenova John
Frank Aaron
Gonzalez David
Raghavan Srinavas
Ramappa Deepak A.
Brady III W. James
Garner Jacqueline J.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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