System for transferring a fine pattern onto a target

Details System for transferring a fine pattern onto a target System for transferring a fine pattern onto a target

1981-12-18

1983-10-18

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, G21K 500

Patent

active

044110138

ABSTRACT:
An X-ray system for transferring a fine pattern onto a target has a mask, on the surface of which is formed an X-ray absorbing layer in a predetermined pattern and which is made of a single crystal of high regularity. Parallel monochromic X-rays become incident on the lattice plane of the single crystal at an angle .theta.. Diffraction X-rays emerging from the lattice plane are projected onto the surface of a wafer in the normal direction. An X-ray resist layer is formed on the surface of the wafer. Since incident X-rays and diffraction X-rays are absorbed by the X-ray absorbing layer on the mask, the pattern defined by the layer is projected on the X-ray resist layer.

REFERENCES:
patent: 4088896 (1978-05-01), Elkins
IEDM Technical Abstract (Washington D.C.) 1980, p. 415; W. D. Grobman; "Status of X-ray Lithography".

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