System for producing semicondutor layer structures by way of epi

Details System for producing semicondutor layer structures by way of epi System for producing semicondutor layer structures by way of epi

1988-10-19

1990-06-19

Lawrence, Evan

Coating apparatus

Gas or vapor deposition

Multizone chamber

118729, 118733, C23C 1654

Patent

active

049343157

ABSTRACT:
A system for vapor phase deposition wherein a wafer is heated inside a reaction space and exposed to a gas flow in which the coating substance is contained in the form of an organometallic compound, and is deposited as a monocrystalline layer, by way of gas reactions, on to the wafer. On order to increase productivity, a holder supporting a stack of wafers is moved from a loading station into a reaction region and, with the aid of a stepping motor driving mechanism, is successively transferred through the reaction region, and finally placed into an unloading station. During the loading and the unloading of the holders supporting the wafers, the reaction region is prevented from being contaminated by the atmosphere. A transfer system for the wafers includes driving mechanisms which allow transfer of wafers through the reaction region in either of two opposing directions.

REFERENCES:
patent: 4089735 (1978-05-01), Sussman
patent: 4313254 (1982-02-01), Feldman
patent: 4358472 (1982-11-01), Small et al.
patent: 4430149 (1984-02-01), Berkman

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