System for producing semiconductor layer structures by way of ep

Details System for producing semiconductor layer structures by way of ep System for producing semiconductor layer structures by way of ep

1986-12-23

1988-11-08

Lawrence, Evan

Coating apparatus

Program, cyclic, or time control

118 64, 118412, 118415, B05C 11115, B05C 318, B05C 1302

Patent

active

047827858

ABSTRACT:
An upper crucible part comprises several chambers containing a supersaturated growth solution with which a semiconductor wafer is coated with a monocrystalline semiconductor layer by way of epitaxial growth. The semiconductor wafer is contained in a cassette-shaped lower part which is moved underneath the upper part. The coating itself is effected within a protective-gas atmosphere within a reaction space which, by a diffusion furnace, is heated up to a temperature which is very exactly adhered to. In order to avoid a frequent cooling of the reaction space due to exposure to the ambient temperature and subsequent re-heating, the system comprises a loading station into which several lower crucible parts together with the semiconductor wafers, with the exclusion of air, are introduced into the reaction space and an epitaxial-growth region through which the lower crucible parts are moved successively below the stationarily arranged crucible part, as well as an unloading station in which the lower crucible parts, with the exclusion of air, are removed from the reaction space.

REFERENCES:
patent: 3993963 (1976-11-01), Logan et al.
patent: 4013040 (1977-03-01), Horikoshi
patent: 4028148 (1977-06-01), Horikoshi
patent: 4347097 (1982-08-01), Nishizawa
"Ventile," Catalog of Leybold-Heraeus GmbH, No. 176.1.1, HV 200, Section 6, Supplementary Edition, Jun. 1983, pp. 6.2-6.23.
"Vauum Valves," Catalog of Leybold-Heraeus GmbH, No. 176.1.2, HV 250, Section 6, Jan. 1986, pp. 6.2, 6.1.2 and 6.13.
Derwent Abstract of DE-OS 2,211,846.

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