System for improved memory cell access

Details System for improved memory cell access System for improved memory cell access

1999-07-07

2000-07-25

Nelms, David

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36523006, 36518909, G11C 700

Patent

active

060943785

ABSTRACT:
A voltage booting circuit for booting the switching signal applied to a column access passgate is employed to reduce the voltage drop across the passgate. Reduction of the voltage dropped across the passgate results in faster read and write times and improved noise margin. In one application the booted voltage is used only during a write operation, but not during a read. In another application, the booted voltage is used during both operations.

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