System for depositing a layered film

Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium

Reexamination Certificate

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C118S696000, C118S698000, C118S715000, C700S121000

Reexamination Certificate

active

06916380

ABSTRACT:
The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and a second layer of the platinum-rhodium alloy deposited in the presence of an oxidizing gas, such as ozone (O3), provides an electrical conductor that is also a relatively good barrier to oxygen. The platinum-rhodium film stack can be used as an electrode or capacitor plate for a capacitor with a high-k dielectric material. The electrode formed with alternating reducing and oxidizing agents produces a rough surface texture, which enhances the memory cell capacitance.

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