Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-07-22
2008-07-22
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S211000, C365S212000, C365S185170, C365S185180
Reexamination Certificate
active
11618544
ABSTRACT:
System for a non-volatile memory system is provided. The non-volatile memory system includes a voltage generator system operating in one of a plurality of modes for generating a voltage applied to a memory cell of the non-volatile memory system. For one of the plurality of modes, a first input value is selected for controlling a temperature dependent component of the voltage and a second input value is selected for controlling a temperature independent component of the voltage. The temperature dependent component of the voltage and the temperature independent component of the voltage are controlled independently in response to the first input value and the second input value.
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Li Jun
Mofidi Mehrdad
Nandi Prajit
Klein O'Neill & Singh, LLP
Lam David
SanDisk Corporation
Singh Tejinder
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