Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-04-19
2011-04-19
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S663000, C438S660000, C438S659000, C257SE21471, C257SE21001, C257SE21328
Reexamination Certificate
active
07928021
ABSTRACT:
A system for and method of processing, i.e., annealing semiconductor materials. By controlling the time, frequency, variance of frequency, microwave power density, wafer boundary conditions, ambient conditions, and temperatures (including ramp rates), it is possible to repair localized damage lattices of the crystalline structure of a semiconductor material that may occur during the ion implantation of impurities into the material, electrically activate the implanted dopant, and substantially minimize further diffusion of the dopant into the silicon. The wafer boundary conditions may be controlled by utilizing susceptor plates (4) or a water chill plate (12). Ambient conditions may be controlled by gas injection (10) within the microwave chamber (3).
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Kowalski Jeffrey Edward
Kowalski Jeffrey Michael
DSGI, Inc.
Hovey & Williams, LLP
Liu Benjamin Tzu-Hung
Ngo Ngan
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