Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-01-11
2005-01-11
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S225500
Reexamination Certificate
active
06842389
ABSTRACT:
A four-conductor MRAM device comprising an array of memory cells, each of the memory cells including a first magnetic layer, a dielectric, and a second magnetic layer; a plurality of local column sense lines wherein one is electrically connected to the first magnetic layer of the array of memory cells; a plurality of local row sense lines wherein one of the local row sense lines is electrically connected to the second magnetic layer of the array of memory cells; a plurality of global column write lines parallel to the plurality of local column sense lines; a plurality of global row write lines parallel to the plurality of local row sense lines; and wherein the plurality of local column sense lines and the plurality of local row sense lines are connected to read data from the array of memory cells and the plurality of global column write lines and the plurality of global row write lines are connected to write data to the array of memory cells.
REFERENCES:
patent: 6324093 (2001-11-01), Perner et al.
patent: 6532163 (2003-03-01), Okazawa
Eaton, Jr. James R.
Eldredge Ken
Perner Frederick A.
Smith Kenneth K.
Tran Lung
Hewlett--Packard Development Company, L.P.
Le Thong Q.
LandOfFree
System for and method of four-conductor magnetic random... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System for and method of four-conductor magnetic random..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System for and method of four-conductor magnetic random... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3407767