System for and method of forming via holes by multiple...

Details System for and method of forming via holes by multiple... System for and method of forming via holes by multiple...

2006-11-07

2006-11-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S944000, C438S945000, C257SE21023

Reexamination Certificate

active

07132361

ABSTRACT:
Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to define at least one notch along its edge. The second insulator layer is then deposited on another portion of the first conductor layer in a manner whereupon the second insulator layer slightly overlaps each notch of the first insulator layer, thereby forming the one or more via holes. A conductive filler can optionally be deposited in each via hole. Lastly, a second conductive layer can be deposited over the first insulator layer, the second insulator layer and, if provided, the conductive filler.

REFERENCES:
patent: 4853345 (1989-08-01), Himelick
patent: 6946783 (2005-09-01), Kim
patent: 2001/0053586 (2001-12-01), Lee et al.
patent: 2003/0193285 (2003-10-01), Kim
patent: 2003/0218254 (2003-11-01), Kurimoto et al.
patent: 2004/0003775 (2004-01-01), Kim
patent: 2004/0137719 (2004-07-01), Jin
patent: 2006/0024444 (2006-02-01), Brody
patent: 06104206 (1994-04-01), None

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