System for analyzing mask topography and method of forming...

Details System for analyzing mask topography and method of forming... System for analyzing mask topography and method of forming...

2008-01-07

2011-10-25

Le, Brian Q (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

C382S100000, C703S002000

Reexamination Certificate

active

08045787

ABSTRACT:
Provided are a system for analyzing a mask topography, which can reduce calculation time and increase calculation accuracy in consideration of a mask topography effect, and a method of forming an image using the system. The system and method simultaneously obtains a first electric field using a Kirchhoff method without considering a pitch formed on a mask and obtains a second electric field using an electromagnetic field analysis method considering the pitch, and then determines a third electric field on a pupil surface of a projection lens by combining the first electric field and the second electric field of forming an image, so as to calculate the image of an optical lithography system which includes an illumination system and a projection optical system and to which the projection lens belongs.

REFERENCES:
patent: 6893800 (2005-05-01), Jessen et al.
patent: 2004/0122636 (2004-06-01), Adam
patent: 2005/0283747 (2005-12-01), Adam
patent: 2006/0192149 (2006-08-01), Van Dam et al.
patent: 10-0598297 (2006-07-01), None

Affiliated with

Also associated with

Rating

System for analyzing mask topography and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System for analyzing mask topography and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System for analyzing mask topography and method of forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4262145