System and methods for wafer charge reduction for ion implantati

Details System and methods for wafer charge reduction for ion implantati System and methods for wafer charge reduction for ion implantati

1987-05-13

1989-04-25

Fields, Carolyn E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, 31511181, G21K 500

Patent

active

048250872

ABSTRACT:
A diode flood gun for introducing an amplified current of low energy electrons into an ion beam for neutralizing charge build up on a target such as a semiconductor wafer during irradiation by the beam. The low energy, amplified current is effected by introducing an inert gas into the flood gun.

REFERENCES:
patent: 3507709 (1970-04-01), Bowers
patent: 4463255 (1984-07-01), Robertson et al.
patent: 4578589 (1986-03-01), Aitken
patent: 4684848 (1987-08-01), Kaufman et al.
Glawischnig et al., "Charging Studies in New Applied Materials Series 9000 Ion Implantation System", Jan. 1987 Nuclear Instruments publication, pp. 1-4, FIGS. 1-4.

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