System and method to improve reliability in memory word line

Details System and method to improve reliability in memory word line System and method to improve reliability in memory word line

2008-03-20

2011-11-08

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189060, C365S201000

Reexamination Certificate

active

08054696

ABSTRACT:
A method and apparatus are disclosed for improving reliability in a memory circuit. The method includes coupling a pull-down element to a word line, the pull-down element coupled distal to a word line driver. The method further includes, when the word line exhibits a defect causing a first portion of the word line to be electrically isolated from a second portion of the word line, holding the second portion of the word line at a logically low value using the pull-down element. A memory device is disclosed that includes a word line coupled to a memory cell, a word line driver coupled to one end of the word line, and a pull-down element coupled proximate the other end of the word line. The pull-down element is operable, when the word line exhibits a defect causing a first portion of the word line to be electrically isolated from a second portion of the word line, to hold the second portion of the word line at a logical low value.

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patent: 2007/0165479 (2007-07-01), Rehm

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