Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-06-30
2010-10-19
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
07817463
ABSTRACT:
A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.
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Kang Seung H.
Li Xia
Zhu Xiaochun
Kamarchik Peter M.
Pauley Nicholas J.
QUALCOMM Incorporated
Talpalatsky Sam
Tran Michael T
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