System and method of smoothing mask shapes for improved...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10707778

ABSTRACT:
A method is disclosed for providing associated shapes of an optical lithography mask in relation to predetermined main shapes of the mask. The method includes generating simplified layout patterns from the predetermined main shapes of the mask. Such layout patterns are generated by eliminating detail of the main shapes which leads to unmanufacturable associated shapes while preserving geometrically relevant shape information. The associated shapes are then generated relative to the simplified mask patterns.

REFERENCES:
patent: 5821014 (1998-10-01), Chen et al.
patent: 5900340 (1999-05-01), Reich et al.
patent: 6303252 (2001-10-01), Lin
patent: 6413683 (2002-07-01), Liebmann et al.
patent: 6416907 (2002-07-01), Winder et al.
patent: 6492097 (2002-12-01), Chen et al.
patent: 6495435 (2002-12-01), Templeton et al.
patent: 6519760 (2003-02-01), Shi et al.
patent: 6541165 (2003-04-01), Pierrat
patent: 6627361 (2003-09-01), Bula et al.
Granik et al., “Two dimensional G-MEEF Theory and Applications,” Proceedings of SPIE—The International Society for Optical Engineering v.4754 2002 p. 146-155.
LaCour et al., “Model-Based OPC For Sub-Resolution Assist Feature Enhanced Layouts,” Proceedings of SPIE—The International Society for Optical Engineering, 2002.
Joesten et al., “The Effect Of Scattering Bar Assist Features In 193 Nm Lithography,” Optical Microlithography XV. Proceedings of SPIE—The International Society for Optical Engineering v.4691 II 2002, p.861-870.
Shi et al., “Understanding The Forbidden Pitch Phenomenon And Assist Feature Placement,” Metrology, Inspection, and Process Control for Microlithography XVI. Proceedings of SPIE—The International Society for Optical Engineering v.4689 II 2002 p. 985-996.
Reblinsky et al., “Lithographic Comparison Of Assist Feature Design Strategies,” Optical Microlithography XV Santa Clara, CA, USA Mar. 5-8, 2002.
Smith, “Mutually Optimizing Resolution Enhancement Techniques: Illumination, APSM, Assist Feature OPC, And Gray Bars,” Optical Microlithography XIV. Proceedings of SPIE—The International Society for Optical Engineering v.4346 N.1 2001 p. 471-485.
Liebman et al., “Optimizing Style Options For Sub-Resolution Assist Features” Optical Microlithography XIV. Proceedings of SPIE—The International Society for Optical Engineering v.4346 N.1 2001 p. 141-152.
Chen et al., “Template of Specifications for Assist Feature Script Implementation”, Proceedings of SPIE—The International Society for Optical Engineering, v.4754 2002 p.156-166.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method of smoothing mask shapes for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method of smoothing mask shapes for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of smoothing mask shapes for improved... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3853411

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.