Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-11-23
2008-03-18
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S674000, C438S686000, C257SE21171
Reexamination Certificate
active
07344982
ABSTRACT:
A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor wafer. The reactant precursor is Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru. An energy source provides energy to the reaction chamber to induce the chemical reaction. A controllable metering system alternatively supplies the precursor and oxygen to the reaction chamber. The precursor is supplied into the reaction chamber during a first phase and the oxygen is supplied into the reaction chamber during a second phase, which is non-overlapping with the first phase. A first pump/valve provides the precursor to the reaction chamber, and a second pump/valve provides the oxygen to the reaction chamber, each in response to a controller. The Ruthenium is selectively deposited on oxide sites patterned on a surface of the semiconductor wafer.
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Dey Sandwip Kumar
Goswami Jaydeb
Arizona Board of Regents, acting for and on behalf of Arizona St
Ghyka Alexander
McDonnell Boehnen & Hulbert & Berghoff LLP
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