Semiconductor device manufacturing: process – Chemical etching
Patent
1997-05-22
1999-08-17
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
438689, 438629, 438637, 438638, 438639, 438640, 438668, 438672, 438675, 438677, H01L 21302
Patent
active
059393343
ABSTRACT:
A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided. The method removes metal oxides with .beta.-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.
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Paper titled, "Etching of Copper and Copper Oxide at High Rates via Generation of Volatile Copper Species" by Farkas, J., Chi, K.M., Hampden-Smith, M.J. and Kodas, T.T., presented at the European Spring 92 MRS, Jun. 1992.
Charneski Lawrence J.
Evans David R.
Hsu Sheng Teng
Nguyen Tue
Bowers Charles
Maliszewski Gerald
Nguyen Thanh
Ripma David C.
Sharp Kabushiki Kaisha
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