System and method of selectively cleaning copper substrate surfa

Semiconductor device manufacturing: process – Chemical etching

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438689, 438629, 438637, 438638, 438639, 438640, 438668, 438672, 438675, 438677, H01L 21302

Patent

active

059393343

ABSTRACT:
A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided. The method removes metal oxides with .beta.-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.

REFERENCES:
patent: 5424246 (1995-06-01), Matsuo et al.
patent: 5650015 (1997-07-01), Kobayashi
patent: 5686151 (1997-11-01), Imai et al.
patent: 5705443 (1998-01-01), Stauf et al.
patent: 5744192 (1998-04-01), Nguyen et al.
patent: 5767301 (1997-01-01), Senzaiki et al.
patent: 5789027 (1996-11-01), Watkins et al.
patent: 5820664 (1995-03-01), Gardiner et al.
patent: 5821169 (1996-08-01), Nguyen et al.
patent: 5851367 (1996-10-01), Nguyen et al.
Paper titled, "Etching of Copper and Copper Oxide at High Rates via Generation of Volatile Copper Species" by Farkas, J., Chi, K.M., Hampden-Smith, M.J. and Kodas, T.T., presented at the European Spring 92 MRS, Jun. 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method of selectively cleaning copper substrate surfa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method of selectively cleaning copper substrate surfa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of selectively cleaning copper substrate surfa will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-314601

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.