Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2011-06-14
2011-06-14
Meeks, Timothy H (Department: 1715)
Coating processes
Coating by vapor, gas, or smoke
C427S255280, C427S255310, C118S715000
Reexamination Certificate
active
07959970
ABSTRACT:
A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.
REFERENCES:
patent: 5403434 (1995-04-01), Moslehi
patent: 5993679 (1999-11-01), Koide et al.
patent: 6057247 (2000-05-01), Imai et al.
patent: 6545245 (2003-04-01), Wei et al.
patent: 7041608 (2006-05-01), Sieber et al.
patent: 7097716 (2006-08-01), Barnes et al.
patent: 2002/0148816 (2002-10-01), Jung et al.
patent: 2004/0084409 (2004-05-01), Deshmukh et al.
patent: 2004/0109263 (2004-06-01), Suda et al.
patent: 2004/0168705 (2004-09-01), Sun et al.
patent: 2000-195830 (2000-07-01), None
Office Action issued Oct. 26, 2010, in Japan Patent Application No. 2007-506148 (English-language Translation only).
Gaudet Marcel
Mosden Aelan
Soave Robert J.
Gambetta Kelly M
Meeks Timothy H
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
LandOfFree
System and method of removing chamber residues from a plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method of removing chamber residues from a plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of removing chamber residues from a plasma... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2730622