System and method of operation for resistive change memory

Details System and method of operation for resistive change memory System and method of operation for resistive change memory

2008-10-01

2010-11-16

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S149000, C365S163000

Reexamination Certificate

active

07835172

ABSTRACT:
The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes a data storage element which includes a variable resistance and an electrode, and a controller which selects a first mode that stores data by the resistance value of the variable resistance and a second mode that stores data by the amount of electrical charges stored in the electrode. By selectively using the data storage element in the first mode and the second mode, a plurality of storage modes can be implemented with a single data storage element. Thus, miniaturization and cost reduction of the semiconductor device can be achieved.

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