System and method of manufacturing a substrate device

Details System and method of manufacturing a substrate device System and method of manufacturing a substrate device

2006-10-10

2006-10-10

Ghyka, Alexander (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S072000, C257SE27111, C257SE29290

Reexamination Certificate

active

07119391

ABSTRACT:
The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.

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