System and method of fabricating micro cavities

Details System and method of fabricating micro cavities System and method of fabricating micro cavities

2003-11-13

2008-09-30

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S456000

Reexamination Certificate

active

07429495

ABSTRACT:
A system and method for manufacturing micro cavities at the wafer level using a unique, innovative MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed, with epoxy bonded single-crystalline silicon membrane as cap and deposited and/or electroplated metal as sidewall, on substrate wafers. The epoxy is also the sacrificial layer. It is removed from within the cavity through small etch access holes etched in the silicon cap before the etch access holes are sealed under vacuum. The micro cavities manufactured therein can be used as pressure sensors or for packaging MEMS devices under vacuum or inert environment. In addition, the silicon membrane manufactured therein can be used to manufacture RF switches.

REFERENCES:
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5242863 (1993-09-01), Xiang-Zheng et al.
patent: 5397962 (1995-03-01), Moslehi
patent: 5448068 (1995-09-01), Lee et al.
patent: 5486491 (1996-01-01), Sengupta et al.
patent: 5493177 (1996-02-01), Muller et al.
patent: 5550090 (1996-08-01), Ristic et al.
patent: 5593495 (1997-01-01), Masuda et al.
patent: 5640042 (1997-06-01), Koscica et al.
patent: 5694134 (1997-12-01), Barnes
patent: 5801383 (1998-09-01), Wada et al.
patent: 5886867 (1999-03-01), Chivukula et al.
patent: 5891751 (1999-04-01), Kurtz et al.
patent: 5921461 (1999-07-01), Kennedy et al.
patent: 5929497 (1999-07-01), Chavan et al.
patent: 5990766 (1999-11-01), Zhang et al.
patent: 6060336 (2000-05-01), Wan
patent: 6074971 (2000-06-01), Chiu et al.
patent: 6093579 (2000-07-01), Sathe
patent: 6117787 (2000-09-01), Park
patent: 6135856 (2000-10-01), Tjaden et al.
patent: 6258223 (2001-07-01), Cheung et al.
patent: 6262417 (2001-07-01), Ju
patent: 6284149 (2001-09-01), Li et al.
patent: 6294425 (2001-09-01), Hideki
patent: 6377142 (2002-04-01), Chiu et al.
patent: 6377217 (2002-04-01), Zhu et al.
patent: 6377440 (2002-04-01), Zhu et al.
patent: 6404614 (2002-06-01), Zhu et al.
patent: 6440289 (2002-08-01), Woo et al.
patent: 6492883 (2002-12-01), Liang et al.
patent: 6514895 (2003-02-01), Chiu et al.
patent: 6525630 (2003-02-01), Zhu et al.
patent: 6534850 (2003-03-01), Liebeskind
patent: 6535076 (2003-03-01), Partridge et al.
patent: 6543292 (2003-04-01), Colton et al.
patent: 6547973 (2003-04-01), Field
patent: 6556102 (2003-04-01), Sengupta et al.
patent: 6570750 (2003-05-01), Calcatera et al.
patent: 6590468 (2003-07-01), du Toit et al.
patent: 6593242 (2003-07-01), Morgenstern
patent: 6597265 (2003-07-01), Liang et al.
patent: 2004/0219706 (2004-11-01), Wan
. J. Yao et al. IEEE J. MEMS vol. 8(2), 1999, pp. 129-134.
S. P. Pacheco et al. IEEE MTT-S Int. Microwave Symp. Dig., Boston, MA, Jun. 2000, pp. 165-167.
C.F. Wan, F.C. Suizbach, and J.D. Luttmer, “TiNxOy transparent electrode material for HgCdTe infrared devices”. J.Vac.Sci Technol. vol. 10. No. 4. Jul./Aug. 1992.

Affiliated with

Also associated with

Rating

System and method of fabricating micro cavities does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method of fabricating micro cavities, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of fabricating micro cavities will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3982113