System and method of encapsulation

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S052000, C438S055000, C438S422000, C257S618000, C257SE23183

Reexamination Certificate

active

07993950

ABSTRACT:
Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening.

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