System and method for voltage contrast analysis of a wafer

Details System and method for voltage contrast analysis of a wafer System and method for voltage contrast analysis of a wafer

2007-02-27

2007-02-27

Berman, Jack (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

C250S306000, C250S307000, C250S311000, C324S754120

Reexamination Certificate

active

10942312

ABSTRACT:
System and a method for electrically testing a semiconductor wafer, the method including: (a) scanning a charged particle beam along at least one scan line while maintaining an electrode located at a vicinity of the wafer at a first voltage that differs from a voltage level of a first scanned portion of the wafer, and collecting charged particles scattered from the first scanned portion; (b) scanning a charged particle beam along at least one other scan line while maintaining the electrode at a second voltage that differs from a voltage level of a second scanned portion such as to control a charging state of at least an area that comprises the first and second scanned portions; and (c) repeating the scanning stages until a predefined section of the wafer is scanned.

REFERENCES:
patent: 6635873 (2003-10-01), Todokoro et al.

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