Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Patent
1998-10-13
2000-09-05
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
438515, 438528, 438798, H01L 21322
Patent
active
061142247
ABSTRACT:
A system and method for using a nitrous oxide plasma treatment to eliminate defects at an interface between a stop layer and an integral layered dielectric. The system and method provide a reliable and simplified technology that eliminates the small bubble-like defects that can be common to thin nitride layers. The system includes a plasma device and a processing chamber. The method encompasses the steps of preparing a first integral layered dielectric on a substrate before depositing a stop layer thereupon. A plasma gas is then ionized. Preferably, the plasma gas is composed of nitrogen and oxygen. The stop layer is then exposed to the plasma gas until a primary surface of the stop layer is bombarded plane. A second integral layered dielectric is then formed on the primary surface. A top surface of the second integral layered dielectric is generally plane and parallel to the primary surface.
REFERENCES:
patent: 5424222 (1995-06-01), Arndt
patent: 5474955 (1995-12-01), Thakur
patent: 5556806 (1996-09-01), Pan et al.
patent: 5780115 (1998-07-01), Park et al.
patent: 5807660 (1998-09-01), Lin et al.
Kitson Terri Jo
Ngo Minh Van
Advanced Micro Devices
Monin, Jr. Donald L.
Pham Hoai
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