Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-17
2008-10-28
Lebentritt, Michael (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S168000, C438S187000, C438S424000, C257SE33003, C257SE31040, C257SE29003, C257SE21121, C257SE21123
Reexamination Certificate
active
07442589
ABSTRACT:
Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.
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Ansheng Liu, et al., A high-speed silicon optical modulator based on a metal-oxide-seminconducter capacitor; Nature Publishing Group, 2004, pp. 615-618; Santa Clara, California.
Keyser Thomas
Yang Ken L.
Yu Lianzhong
Honeywell International , Inc.
Lebentritt Michael
McDonnell Boehnen & Hulbert & Berghoff LLP
Tillie Chakila
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