System and method for semiconductor device fabrication using...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

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07669176

ABSTRACT:
System and method for using adjustment patterns as well as physical parameters as targets to control mask structure dimensions using optical proximity correction. A method for correcting layer patterns comprises selecting optimum sacrificial patterns, defining virtual targets from the optimum sacrificial patterns, and executing an optical proximity correction process with the virtual targets to correct layer patterns. The selecting of the optimum sacrificial patterns may be performed in a separate processing stage, thereby reducing the number of targets to be investigated during a process window optical proximity correction, thereby reducing the runtime, processing, and memory requirements.

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