System and method for self-aligned dual patterning

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

Reexamination Certificate

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C430S030000, C430S313000, C430S314000, C430S323000, C430S324000, C430S330000, C430S942000

Reexamination Certificate

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07935464

ABSTRACT:
A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.

REFERENCES:
patent: 7786015 (2010-08-01), Chen et al.
patent: 2009/0305506 (2009-12-01), Linz
patent: 2010/0009470 (2010-01-01), Davis et al.

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