System and method for selectivity etching an integrated circuit

Details System and method for selectivity etching an integrated circuit System and method for selectivity etching an integrated circuit

2007-01-12

2008-07-22

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

07402469

ABSTRACT:
A method is provided for selectively marking a region of integrated circuit (IC). The method provides an IC die with a first region located on a backside surface of a bulk silicon (Si) layer. A semi-transparent film is formed overlying the bulk Si layer, semi-transparent to light having a first wavelength. The semi-transparent film is irradiated with light having the first wavelength in the range of 1 to 2 microns. In response to irradiating the semi-transparent film with a first power density, the IC die first region is located. Then, in response to irradiating the semi-transparent film with a second power density, greater than the first power density, a region of the semi-transparent film is marked overlying the IC die first region. In one aspect, a region of the bulk Si layer underlying the marked (or ablated away) semi-transparent film is selectively etched to expose the IC die first region.

REFERENCES:
patent: 6248973 (2001-06-01), Matsumura et al.
patent: 6447979 (2002-09-01), Hattori et al.
patent: 2003/0027053 (2003-02-01), Yan
patent: 2006/0023058 (2006-02-01), Tanaka
patent: 2006/0043510 (2006-03-01), Yamazaki et al.
patent: 2006/0202615 (2006-09-01), Murakami et al.
patent: 2007/0023790 (2007-02-01), Ohnuma et al.

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