Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-04-22
2008-04-22
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S634000, C438S639000, C438S706000, C438S714000, C438S723000, C438S738000, C216S018000, C216S037000, C216S041000, C216S063000, C216S079000
Reexamination Certificate
active
11039537
ABSTRACT:
In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one contact opening is associated with each contact. Stripping of the patterned layer of photoresist and related residues is performed. After stripping, the stop layer is removed from the contacts. In one feature, the stop layer is removed from the contacts by etching the stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen. In another feature, the photoresist is stripped after the stop layer is removed. Stripping the patterned layer of photoresist and the related residues is performed, in this case, using a plasma that is formed predominantly including hydrogen without oxygen.
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Helle Wolfgang
Savas Stephen E.
Ahmed Shamim
Angadi Maki
Mattson Technology Inc.
Pritzkau Patent Group LLC
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