Drying and gas or vapor contact with solids – Apparatus – With automatic control
Patent
1998-07-10
2000-12-19
Gravini, Stephen
Drying and gas or vapor contact with solids
Apparatus
With automatic control
34557, 34570, 34571, 118715, 118719, F26B 1900
Patent
active
061613118
ABSTRACT:
An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber connected by an isolation gate valve to a processing chamber. Additionally, the apparatus includes pipes for delivering a purge gas into the wafer handling chamber. The purge gas is used to eliminates particles from the enclosure. The apparatus also includes a pilot operated back pressure regulator for regulating the delivery and removal of the purge gas from the enclosure. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. The apparatus also includes a Bernoulli wand for lifting and holding a single semiconductor wafer. A dome loaded regulator is used to control the ramp rates of the gas to the Bernoulli wand. The dome loaded regulator is actuated by a pilot gas. The ramp up and ramp down rates of the Bernoulli wand gas can be control by a multitude of restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Through the use of an alpha particle emission source in the purge gas line prior to the load lock and wafer handling chamber, the purged gas molecules are ionized. The ionized gas is conductive and therefore discharges all static inside the semiconductor equipment. By removable of the static charge particle and wafers are no longer attracted to each other by electrostatic force. In addition, the apparatus includes means for reducing gas flow turbulence when switching valves within the reactor.
REFERENCES:
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4747367 (1988-05-01), Posa
patent: 4793283 (1988-12-01), Sarkozy
patent: 4976610 (1990-12-01), Yates
patent: 5020475 (1991-06-01), Crabb et al.
patent: 5080549 (1992-01-01), Goodwin et al.
patent: 5092728 (1992-03-01), Crabb et al.
patent: 5094885 (1992-03-01), Selbrede
patent: 5200232 (1993-04-01), Tappan et al.
patent: 5207835 (1993-05-01), Moore
patent: 5365772 (1994-11-01), Ueda et al.
patent: 5366557 (1994-11-01), Yu
patent: 5373806 (1994-12-01), Logar
patent: 5411593 (1995-05-01), Carlson et al.
patent: 5492566 (1996-02-01), Sumnitsch
patent: 5505779 (1996-04-01), Mizuno et al.
patent: 5614247 (1997-03-01), Barbee et al.
patent: 5624499 (1997-04-01), Mizuno et al.
patent: 5997588 (1999-12-01), Goodwin et al.
patent: 6025602 (2000-02-01), Rose et al.
patent: 6067728 (2000-05-01), Farmer et al.
patent: 6082150 (2000-07-01), Stucker
patent: 6086678 (2000-07-01), Wilson et al.
Doley Allan
Goodwin Dennis
O'Neill Kenneth
Rodriguez David
Vrijburg Gerben
ASM America Inc.
Gravini Stephen
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