Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-04
2011-01-04
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S072000, C257SE23020, C257S499000
Reexamination Certificate
active
07863184
ABSTRACT:
A bond pad structure has a first conductive layer and an anti-reflective coating layer disposed on the first conductive layer. The first conductive layer includes first and second portions (which could be formed by etching). Part of the first portion is exposed within a bond pad opening, and the second portion is electrically connected to an integrated circuit. The anti-reflective coating layer also includes first and second portions (which could be formed by etching). The first portion may be located near the bond pad opening, and the second portion may be located farther away from the bond pad opening. A second conductive layer electrically connects the first and second portions of the first conductive layer. In this way, the first portion of the anti-reflective coating layer may undergo oxidation without leading to oxidation of the second portion of the anti-reflective coating layer.
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National Semiconductor Corporation
Stark Jarrett J
Tobergte Nicholas
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