System and method for reading multiple magnetic tunnel...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000, C365S148000, C365S189070, C365S189150

Reexamination Certificate

active

07577020

ABSTRACT:
A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select transistor, measuring a first resistance of the memory string, storing the first resistance, toggling a predetermined one of the MTJs, measuring a second resistance of the memory string after the toggling, toggling back the predetermined one of the MTJs and comparing the first and second resistances with a plurality of predetermined resistance values, wherein the comparison result leads to a determination of the data stored in the MTJs.

REFERENCES:
patent: 6909631 (2005-06-01), Durlam et al.
patent: 7082056 (2006-07-01), Chen et al.

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