Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-10-01
2009-08-18
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S148000, C365S189070, C365S189150
Reexamination Certificate
active
07577020
ABSTRACT:
A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select transistor, measuring a first resistance of the memory string, storing the first resistance, toggling a predetermined one of the MTJs, measuring a second resistance of the memory string after the toggling, toggling back the predetermined one of the MTJs and comparing the first and second resistances with a plurality of predetermined resistance values, wherein the comparison result leads to a determination of the data stored in the MTJs.
REFERENCES:
patent: 6909631 (2005-06-01), Durlam et al.
patent: 7082056 (2006-07-01), Chen et al.
Chung Shine
Hsueh Fu-Lung
Tang Denny
Bui Tha-O
Hur J. H.
LandOfFree
System and method for reading multiple magnetic tunnel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for reading multiple magnetic tunnel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for reading multiple magnetic tunnel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4080042