Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2008-04-14
2010-10-12
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S203000, C365S206000, C365S210130
Reexamination Certificate
active
07813198
ABSTRACT:
One embodiment of the invention includes a memory system. The system comprises a memory cell coupled to a bit-line node. The memory cell can be configured to generate a bit-line current on the bit-line node in response to a bias voltage during a read operation. The system further comprises a sense amplifier configured to maintain a substantially constant voltage magnitude of the bit-line node during a pre-charge phase and a sense phase of the read operation based on regulating current flow to and from the bit-line node, and to determine a memory value of the flash memory transistor during the read operation based on a magnitude of the bit-line current on the bit-line node.
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Heinrich-Barna Stephen Keith
Lin Sung-Wei
Brady III Wade James
Dinh Son
Stephens Dawn V.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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