System and method for reading memory

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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Details

C365S203000, C365S206000, C365S210130

Reexamination Certificate

active

07813198

ABSTRACT:
One embodiment of the invention includes a memory system. The system comprises a memory cell coupled to a bit-line node. The memory cell can be configured to generate a bit-line current on the bit-line node in response to a bias voltage during a read operation. The system further comprises a sense amplifier configured to maintain a substantially constant voltage magnitude of the bit-line node during a pre-charge phase and a sense phase of the read operation based on regulating current flow to and from the bit-line node, and to determine a memory value of the flash memory transistor during the read operation based on a magnitude of the bit-line current on the bit-line node.

REFERENCES:
patent: 4421996 (1983-12-01), Chuang et al.
patent: 4894802 (1990-01-01), Hsia et al.
patent: 5528543 (1996-06-01), Stiegler
patent: 5872794 (1999-02-01), Cook et al.
patent: 6160286 (2000-12-01), Chi
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7072216 (2006-07-01), Kim
patent: 7139196 (2006-11-01), Tran
patent: 7187581 (2007-03-01), Ferrant et al.
patent: 7277324 (2007-10-01), Tomita
patent: 2004/0203503 (2004-10-01), Rollins et al.
patent: 2006/0039199 (2006-02-01), Gratz et al.
patent: 2007/0171744 (2007-07-01), Mokhlesi et al.
patent: 2007/0253255 (2007-11-01), Gallo et al.

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