System and method for reading magnetization orientation of...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000, C365S199000, C365S213000

Reexamination Certificate

active

06985381

ABSTRACT:
A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.

REFERENCES:
patent: 5448515 (1995-09-01), Fukami et al.
patent: 6256222 (2001-07-01), Sakakima et al.
patent: 6317375 (2001-11-01), Perner
patent: 6363000 (2002-03-01), Perner et al.
patent: 6385079 (2002-05-01), Tran
patent: 2004/0062117 (2004-04-01), Perner et al.

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