Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-01-10
2006-01-10
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S199000, C365S213000
Reexamination Certificate
active
06985381
ABSTRACT:
A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.
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Anthony Thomas C.
Bhattacharyya Manoi K.
Holden Anthony P.
Hewlett--Packard Development Company, L.P.
Nguyen Van-Thu
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