System and method for reading a memory cell

Details System and method for reading a memory cell System and method for reading a memory cell

2007-10-02

2007-10-02

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S189070

Reexamination Certificate

active

11252143

ABSTRACT:
A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

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“Offset Compensating Bit-Line Sensing Scheme for High Denstiy DRAM's” by Yohi Watanabe et al., IEE Journal of Solid-state Circuits, vol. 29 No. 1, Jan. 1994.

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