Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2006-01-03
2006-01-03
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S148000, C365S158000
Reexamination Certificate
active
06982909
ABSTRACT:
A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.
REFERENCES:
patent: 6081453 (2000-06-01), Iwahashi
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6567297 (2003-05-01), Baker
patent: 6836422 (2004-12-01), Perner et al.
patent: 6865108 (2005-03-01), Smith et al.
patent: 2002/0101758 (2002-08-01), Baker
patent: 2003/0039162 (2003-02-01), Baker
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements” by M. Durlam et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, Motorola Labs, Physical Sciences Research Labs, Tempe, AZ, Section TA 7.3.
“A 10ns Read and Write Non-volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” by Roy Scheuerlain et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, IBM Research Almaden Research Center, San Jose, CA, Section TA 7.2.
“Offset Compensating Bit-Line Sensing Scheme for High Density DRAM's” by Yohi Watanabe et al., IEE Jurnal of Solid-State Circuits, vol. 29, No. 1, Jan. 1994.
Champion Corbin L.
Perner Frederick A.
Smith Kenneth K.
Auduong Gene N.
Hewlett--Packard Development Company, L.P.
LandOfFree
System and method for reading a memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for reading a memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for reading a memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3529487