Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2007-01-23
2007-01-23
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S382000, C257SE21006
Reexamination Certificate
active
10801268
ABSTRACT:
A system and method is disclosed for providing a self heating adjustable titanium disilicon (TiSi2) resistor. A triangularly shaped layer of polysilicon is placed a layer of insulation material. A layer of titanium is applied over the polysilicon and heated to form a layer of C49 type of TiSi2. A current is then applied to the small end of the triangularly shaped layer of C49 TiSi2. The current generates heat in a high resistance portion of the triangularly shaped layer of C49 TiSi2and converts a portion of the C49 TiSi2to C54 TiSi2. The lower resistance of the C54 TiSi2decreases the effective resistance of the resistor. A desired value of resistance may be selected by adjusting the magnitude of the applied current.
REFERENCES:
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 6281101 (2001-08-01), Iyer
National Semiconductor Corporation
Smith Bradley K.
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