System and method for providing a self heating adjustable...

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

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C438S382000, C257SE21006

Reexamination Certificate

active

10801268

ABSTRACT:
A system and method is disclosed for providing a self heating adjustable titanium disilicon (TiSi2) resistor. A triangularly shaped layer of polysilicon is placed a layer of insulation material. A layer of titanium is applied over the polysilicon and heated to form a layer of C49 type of TiSi2. A current is then applied to the small end of the triangularly shaped layer of C49 TiSi2. The current generates heat in a high resistance portion of the triangularly shaped layer of C49 TiSi2and converts a portion of the C49 TiSi2to C54 TiSi2. The lower resistance of the C54 TiSi2decreases the effective resistance of the resistor. A desired value of resistance may be selected by adjusting the magnitude of the applied current.

REFERENCES:
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 6281101 (2001-08-01), Iyer

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