Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-05-25
2010-12-07
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S313000, C438S319000, C438S320000, C438S343000, C438S369000, C257S197000, C257S198000
Reexamination Certificate
active
07846806
ABSTRACT:
A system and method are disclosed for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture. The transistor of the present invention comprises a non-selective epitaxial growth (NSEG) collector, an NSEG base, an NSEG emitter and a raised external base that is formed by the selective epitaxial growth (SEG) of a doped polysilicon layer.
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Ramdani Jamal
Xu Mingwei
Kusumakar Karen M
National Semiconductor Corporation
Nguyen Ha Tran T
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