Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2011-04-19
2011-04-19
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S312000, C438S434000
Reexamination Certificate
active
07927958
ABSTRACT:
A system and method are disclosed for providing a self aligned bipolar transistor using a silicon nitride ring. An active region of the transistor is formed and a sacrificial emitter is formed above the active region of the transistor. A silicon nitride ring is formed around the sacrificial emitter. The sacrificial emitter and the silicon nitride ring are formed by depositing a layer of silicon nitride material over the active area of the transistor and performing an etch process to simultaneously create both the sacrificial emitter and the silicon nitride ring. The silicon nitride ring provides support for forming a raised external base for the transistor.
REFERENCES:
patent: 5866462 (1999-02-01), Tsai et al.
patent: 6020246 (2000-02-01), Koscielniak et al.
patent: 6043554 (2000-03-01), Miwa
patent: 6130136 (2000-10-01), Johnson et al.
patent: 6329698 (2001-12-01), Koscielniak et al.
patent: 6492238 (2002-12-01), Ahlgren et al.
patent: 6559020 (2003-05-01), Salmi
patent: 6667521 (2003-12-01), Ahlgren et al.
patent: 6740552 (2004-05-01), Gonzalez et al.
patent: 6767798 (2004-07-01), Kalnitsky et al.
patent: 6780695 (2004-08-01), Chen et al.
patent: 6809024 (2004-10-01), Dunn et al.
patent: 6864560 (2005-03-01), Khater et al.
patent: 6906401 (2005-06-01), Dunn et al.
patent: 6940149 (2005-09-01), Divakaruni et al.
patent: 6960820 (2005-11-01), Freeman et al.
patent: 6972443 (2005-12-01), Khater
patent: 7002221 (2006-02-01), Khater et al.
patent: 7018778 (2006-03-01), Leibiger et al.
patent: 7026666 (2006-04-01), Kalnitsky et al.
patent: 7037798 (2006-05-01), Adam et al.
patent: 7087940 (2006-08-01), Khater et al.
patent: 7119416 (2006-10-01), Adam et al.
patent: 7253096 (2007-08-01), Khater et al.
patent: 7341920 (2008-03-01), Khater
patent: 7494887 (2009-02-01), Hussain
patent: 7566626 (2009-07-01), Xu et al.
patent: 7611954 (2009-11-01), Freeman et al.
patent: 7642168 (2010-01-01), Xu et al.
patent: 7687887 (2010-03-01), El-Diwany et al.
patent: 7709930 (2010-05-01), Stricker et al.
patent: 7781295 (2010-08-01), Ramdani et al.
patent: 7838375 (2010-11-01), Xu et al.
patent: 2001/0017399 (2001-08-01), Oda et al.
patent: 2003/0045066 (2003-03-01), Igarashi
patent: 2004/0188797 (2004-09-01), Khater et al.
patent: 2005/0142787 (2005-06-01), Ko
patent: 2005/0184359 (2005-08-01), Akatsu et al.
patent: 2006/0054595 (2006-03-01), Starzynski
patent: 2006/0249814 (2006-11-01), Greenberg et al.
patent: 2007/0001264 (2007-01-01), Sheridan et al.
patent: 2007/0215978 (2007-09-01), Stricker et al.
patent: 2010/0127352 (2010-05-01), El-Diwany et al.
P. Chevalier, et al., “230 Ghz self-aligned SiGeC HBT for 90 nm BiCMOS technology”, 2004 IEEE, p. 225-228.
S. Harrison, et al., “Poly-gate Replacement Through Contact Hole (Pretch): A new method for High-K/Metal gate and multi-oxide implementation on chip,” IEEE 2004, pp. 12.2.1-12.2.4.
D. Nguyen-Ngoc et al., “A 200 mm SiGe-HBT BiCMOS Technology for Mixed Signal Applications,” 1995 IEEE, BCTM95 Process Technology, pp. 89-92.
Yousuke Yamamoto et al., “SDX: A Novel Self-Aligned Technique and Its Application to High-Speed Bipolar LSI's,” IEEE Transactions on Electron Devices, vol. 35, No. 10, Oct. 1988, pp. 1601-1608.
Bengt Edholm et al., “A Self-Aligned Lateral Bipolar Transistor Realized on SIMOX-Material,” IEEE Transactions on Electron Devices, vol. 40, No. 12, Dec. 1993, pp. 2359-2360.
Michihiro Inoue et al., “Self-Aligned Complementary Bipolar Transistors Fabricated with a Selective-Oxidation Mask,” IEEE Transactions on Electron Devices, vol. ED-34, No. 10, Oct. 1987, pp. 2146-2152.
D. L. Harame et al., “Si/SiGe Epitaxial-Base Transistors-Part II: Process Integration and Analog Applications,” IEEE Transactions on Electron Devices, vol. 42, No. 3, Mar. 1995, pp. 469-482.
Adler Steven J.
Xu Mingwei
Menz Laura M
National Semiconductor Corporation
LandOfFree
System and method for providing a self aligned bipolar... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for providing a self aligned bipolar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for providing a self aligned bipolar... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2702658