Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-01-02
2007-01-02
Tran, Michael (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S191000
Reexamination Certificate
active
10628896
ABSTRACT:
A memory device that has an internal memory array provides timing signals to control the output timing of one or more redundant memory blocks that substitute for defective memory blocks in the internal memory array. In one embodiment, the internal memory array includes a pipelined output stage, and the timing signals ensure that the data is output from the memory devices in the order memory access requests are issued, even when the latency of the redundant memory blocks is less than the latency of the main memory array by up to two clock periods. In one embodiment, a FIFO memory queues the output data of the redundant memory blocks waiting to be output.
REFERENCES:
patent: 4376300 (1983-03-01), Tsang
patent: 6762963 (2004-07-01), Inoue et al.
Chen Chao-Wu
Khaled Wasim
Roy Richard
Kwok Edward C.
MacPherson Kwok & Chen & Heid LLP
Mosaic Systems, Inc.
Tran Michael
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