Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-05-25
2010-11-23
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S312000, C438S320000, C438S343000, C438S349000, C438S369000, C257S197000, C257S198000, C257S200000
Reexamination Certificate
active
07838375
ABSTRACT:
A system and method are disclosed for providing an improved polyemit module for a self aligned heterojunction bipolar transistor architecture. The polyemit module of the transistor of the present invention is formed using a double layer deposition process. In the double layer deposition process, the first layer is a layer of emitter polysilicon and the second layer is a sacrificial layer of silicon germanium (SiGe). The shape and thickness of the emitter polysilicon layer of the polyemit module provides (1) a reduction in the overall resistance of the emitter and (2) an increase in the contact area between the emitter polysilicon layer and a contact structure that is more than three times the contact area that is provided in prior art polyemit modules.
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Ramdani Jamal
Xu Mingwei
Kusumakar Karen M
National Semiconductor Corporation
Nguyen Ha Tran T
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