Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S334000, C257SE23020, C257SE29131
Reexamination Certificate
active
07989883
ABSTRACT:
A system and method is disclosed that prevents the formation of a vertical bird's beak structure in the manufacture of a semiconductor device. A polysilicon filled trench is formed in a substrate of the semiconductor device. One or more composite layers are then applied over the trench and the substrate. A mask and etch process is then applied to etch the composite layers adjacent to the polysilicon filled trench. A field oxide process is applied to form field oxide portions in the substrate adjacent to the trench. Because no field oxide is placed over the trench there is no formation of a vertical bird's beak structure. A gate oxide layer is applied and a protection cap is formed over the polysilicon filled trench to protect the trench from unwanted effects of subsequent processing steps.
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Fanling Yang, et al., “Characterization of Collector-Emitter Leakage in Self-Aligned Double-Poly Bipolar Junction Transistors”, J. Electrochem. Soc., vol. 140, No. 10, Oct. 1993, p. 3033-3037.
Dark Charles A.
Strachan Andy
Lindsay, Jr. Walter L
National Semiconductor Corporation
Pompey Ron
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