Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-03
2006-10-03
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000, C438S743000
Reexamination Certificate
active
07115500
ABSTRACT:
A system and method is disclosed for providing a dry-wet-dry etch procedure to create a sidewall profile of a via in a semiconductor device. A first vertical anisotropic dry etch process is applied to etch through a first portion of a dielectric layer. An isotropic wet etch process is then applied to etch a sloping surface in the sidewalls of the via cavity. A second vertical anisotropic dry etch process is then applied to extend the sloping sidewalls of the via cavity down to a substrate of the semiconductor device. The smooth sloping surfaces of the sidewalls are formed without a prior art concave surface of the type that interferes with a via fill process.
REFERENCES:
patent: 6274486 (2001-08-01), Rhodes et al.
Dang Phuc T.
National Semiconductor Corporation
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